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Download e-book for kindle: Advanced High Voltage Power Device Concepts by B. Jayant Baliga

By B. Jayant Baliga

ISBN-10: 1461402689

ISBN-13: 9781461402688

ISBN-10: 1461402697

ISBN-13: 9781461402695

The units defined in “Advanced MOS-Gated Thyristor thoughts” are used in microelectronics creation apparatus, in strength transmission gear, and for extraordinarily excessive strength motor regulate in electrical trains, steel-mills, and so forth. complicated ideas that permit enhancing the functionality of energy thyristors are mentioned the following, in addition to units with blockading voltage services of 5,000-V, 10,000-V and 15,000-V. through the ebook, analytical versions are generated to permit an easy research of the constructions and to procure perception into the underlying physics. the result of two-dimensional simulations are supplied to corroborate the analytical versions and provides higher perception into the machine operation.

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2 5,000-V Silicon Thyristor 31 The leakage current density computed for the 5-kV thyristor structure by using the above analytical model is shown in Fig. 8. 1 Â 1013 cmÀ3 and optimized width of 970 mm at a lifetime of 50 ms. The impact of changing the lifetime on the leakage current is shown in the figure. The leakage current density increases when the lifetime is reduced. Simulation Results In order to gain insight into the physics of operation for the power thyristor under voltage blocking conditions, the results of two-dimensional numerical simulations for the optimized structure are described here.

In the example shown in Fig. 17, the secondary side AC output voltage of the SST is assumed to be 120 V, suitable for delivery of power to residences. In order to achieve this outcome, the high-frequency voltage on the secondary side of the high-frequency transformer is first converted to a 200 V DC bus using the AC-to-DC rectifier stage. The DC voltage is then converted to 120 V AC voltage using the DC-to-AC inverter stage. The power control algorithms used in the SST can be used for power factor correction and to provide fail-safe operation, which are significant advantages when compared with the conventional transformer.

13 with x ¼ Àd in the above equation. The results obtained by using this approach are shown in Fig. 15 for the case of various values of lifetime. A saturation current density of 4 Â 1013 A/cm2 was utilized for the plots. It can be observed that the carrier concentration is reduced by an order of magnitude when compared with the plots in Fig. 14. Simulation Results The results of two-dimensional numerical simulations for the 5-kV silicon thyristor structure are described here. The total width of the structure, as shown by the cross section in Fig.

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Advanced High Voltage Power Device Concepts by B. Jayant Baliga


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