By B. Jayant Baliga
The units defined in “Advanced MOS-Gated Thyristor thoughts” are used in microelectronics creation apparatus, in strength transmission gear, and for extraordinarily excessive strength motor regulate in electrical trains, steel-mills, and so forth. complicated ideas that permit enhancing the functionality of energy thyristors are mentioned the following, in addition to units with blockading voltage services of 5,000-V, 10,000-V and 15,000-V. through the ebook, analytical versions are generated to permit an easy research of the constructions and to procure perception into the underlying physics. the result of two-dimensional simulations are supplied to corroborate the analytical versions and provides higher perception into the machine operation.
Read or Download Advanced High Voltage Power Device Concepts PDF
Best nonfiction_7 books
This ebook constitutes the refereed complaints of the 3rd foreign convention on Interactive electronic Storytelling, ICIDS 2010, held in Edinburgh, united kingdom, in November 2010. The ebook comprises three keynotes, 25 complete and brief papers, eleven posters, four demonstration papers, 6 workshop papers, and 1 educational.
Co-Design is the set of rising concepts which permits for the simultaneous layout of and software program. in lots of situations the place the appliance is especially difficult by way of a number of performances (time, floor, strength consumption), trade-offs among devoted and committed software program have gotten more and more tricky to make a decision upon within the early phases of a layout.
The software maximization paradigm kinds the root of many monetary, mental, cognitive and behavioral types. because it was once first devised within the eighteenth century, quite a few examples have published the deficiencies of the concept that. This ebook makes a contribution to beat these deficiencies by means of considering insensitivity of dimension threshold and context of selection.
- Jigs-med-gling-pa's "Discourse on India" of 1789: A Critical Edition and Annotated Translation of the lHo-phyogs rgya-gar-gyi gtam brtag - pa brgyad -kyi me-long
- Origin of Elements in the Solar System: Implications of Post-1957 Observations
- Disruptive Behavior Disorders in Childhood
- Protecting gardens and landscape plantings from rabbits
- A Review of the "Digital Turn" in the New Literacy Studies
- Inelastic Behaviour of Plates and Shells: IUTAM Symposium, Rio de Janeiro, Brazil August 5–9, 1985
Extra info for Advanced High Voltage Power Device Concepts
2 5,000-V Silicon Thyristor 31 The leakage current density computed for the 5-kV thyristor structure by using the above analytical model is shown in Fig. 8. 1 Â 1013 cmÀ3 and optimized width of 970 mm at a lifetime of 50 ms. The impact of changing the lifetime on the leakage current is shown in the figure. The leakage current density increases when the lifetime is reduced. Simulation Results In order to gain insight into the physics of operation for the power thyristor under voltage blocking conditions, the results of two-dimensional numerical simulations for the optimized structure are described here.
In the example shown in Fig. 17, the secondary side AC output voltage of the SST is assumed to be 120 V, suitable for delivery of power to residences. In order to achieve this outcome, the high-frequency voltage on the secondary side of the high-frequency transformer is first converted to a 200 V DC bus using the AC-to-DC rectifier stage. The DC voltage is then converted to 120 V AC voltage using the DC-to-AC inverter stage. The power control algorithms used in the SST can be used for power factor correction and to provide fail-safe operation, which are significant advantages when compared with the conventional transformer.
13 with x ¼ Àd in the above equation. The results obtained by using this approach are shown in Fig. 15 for the case of various values of lifetime. A saturation current density of 4 Â 1013 A/cm2 was utilized for the plots. It can be observed that the carrier concentration is reduced by an order of magnitude when compared with the plots in Fig. 14. Simulation Results The results of two-dimensional numerical simulations for the 5-kV silicon thyristor structure are described here. The total width of the structure, as shown by the cross section in Fig.
Advanced High Voltage Power Device Concepts by B. Jayant Baliga